An investigation of ionizing radiation damage in different SiGe processes |
| |
| Affiliation: | 1.School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;2.Northwest Institution of Nuclear Technology, Xi'an 710024, China;3.Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China |
| |
| Abstract: | Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO_2 interface and the isolation structure could be contributing to the different ionizing radiation damage. |
| |
| Keywords: | different silicon-germanium process ionizing radiation damage numerical simulation |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
