High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier |
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| Affiliation: | 1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;2. Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China |
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| Abstract: | ![]()
A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells(MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence(PL) properties of the InGaN/AlInGa N MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs(76.1%) is much higher than that of InGaN/GaN MQWs(21%).The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers. |
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| Keywords: | AlInGaN superlattices MQWs photoluminescence x-ray diffraction spectrum |
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