Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures |
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| Affiliation: | State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China |
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| Abstract: | Tunneling field effect transistors (TFETs) based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here, we investigate the TFETs based on two different integration types: in-plane and vertical heterostructures composed of two kinds of layered phosphorous (β-P and δ-P) by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio (PVR) when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of ～106 and a steeper subthreshold swing (SS) of ～23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of the β-P and δ-P layers in the in-plane and vertical heterostructures. |
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| Keywords: | tunneling field effect transistors negative differential resistance effect on/off current ratio subthreshold swing |
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