Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface |
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| Affiliation: | 1.School of Information Engineering, Zhongshan Polytechnic, Zhongshan 528400, China;2.School of Physics and Material Sciences, Guangzhou University, Guangzhou 510000, China;3.SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;4.MEDIT, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | We investigate theoretically the carrier transport in a two-dimensional topological insulator of (001) HgTe/CdTe quantum-well heterostructure with inverted band, and find distinct switchable features of the transmission spectra in the topological edge states by designing the double-electric modulation potentials. The transmission spectra exhibit the significant Fabry-Pérot resonances for the double-electric transport system. Furthermore, the transmission properties show rich behaviors when the Fermi energy lies in the different locations in the energy spectrum and the double-electric barrier regions. The opacity and transparency of the double-modulated barrier regions can be controlled by tuning the modulated potentials, Fermi energy and the length of modulated regions. This electrical switching behavior can be realized by tuning the voltages applied on the metal gates. The Fabry-Pérot resonances leads to oscillations in the transmission which can be observed in experimentally. This electric modulated-mechanism provides us a realistic way to switch the transmission in edge states which can be constructed in low-power information processing devices. |
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| Keywords: | HgTe/CdTe quantum well double-electric modulations transmission spectra Fabry-Pérot resonances |
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