| Preparation and Transparent Property of the n—ZnO／p—Diamond Heterostructure |
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| 作者姓名： | 王成新 高春晓 等 |
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| 作者单位： | StateKeyLaboratoryforSuperhardMaterials,JilinUniversity,Changchun130023 |
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| 摘 要： | Heterostructures of an n-type ZnO film/p-type diamond film on the {111} crystalline diamond substrate have been prepared for the first time.The electrodes of the n-and p-type semiconductors are experimentally verified to be ohmic.The diode shows a good rectification characteristic and the ratio of forward current to the reverse current exceeded 200 within the range of applied voltages of -2 to 2V.The turn-on voltage of the diode is 0.34V and the highest current is about 5.0mA as the forward voltage reaches 2V.Moreover,the diode is optically transparent in the region of 500-700nm wavelength.
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| 关 键 词： | 宝石薄膜 不均匀结构 制备 |
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