| 北京大学1.7MV串列静电加速器的离子注入/辐照实验系统 |
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| 引用本文： | 徐川,付恩刚. 北京大学1.7MV串列静电加速器的离子注入/辐照实验系统[J]. 原子核物理评论, 2021, 38(4): 410-415. DOI: 10.11804/NuclPhysRev.38.2021058 |
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| 作者姓名： | 徐川 付恩刚 |
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| 作者单位： | 北京大学物理学院技术物理系，核物理与核技术国家重点实验室，北京 100871 |
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| 基金项目： | 国家重点研发计划项目(2019YFE03120003, 2017YFE0302500, 2018YFE0307100)；国家自然科学基金资助项目(11975034, 11921006, U20B2025, U21B2082) |
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| 摘 要： | 北京大学1.7 MV串列静电加速器运行至今已有三十多年.该加速器配备有高频电荷交换负离子源和铯溅射负离子源,能够引出从H到Au之间的大部分元素的离子.离子能量可被加速至几百keV到若干MeV,主要开展离子注入/辐照实验和卢瑟福背散射(RBS)和沟道分析等离子束分析工作.基于辐照实验需求,建立了高温辐照系统,温度最高可达...
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| 关 键 词： | 串列静电加速器 离子注入/辐照 法拉第杯 卢瑟福背散射分析 |
| 收稿时间： | 2021-07-27 |
Ion Implantation/Irradiation System of 1.7 MV Tandem Accelerator at Peking University |
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| Chuan XU,Engang FU. Ion Implantation/Irradiation System of 1.7 MV Tandem Accelerator at Peking University[J]. Nuclear Physics Review, 2021, 38(4): 410-415. DOI: 10.11804/NuclPhysRev.38.2021058 |
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| Authors: | Chuan XU Engang FU |
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| Affiliation: | Department of Technical Physics, School of Physics, State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China |
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| Abstract: | The 1.7 MV tandem accelerator at Peking University has been running for more than 30 years. The accelerator is equipped with a Radio Frequency(RF) charge exchange negative ion source and a cesium sputtering negative ion source, which can produce most of the ions from H to Au. It can accelerate the ions to energies from several hundreds of keV to several MeV. The accelerator is used for ion implantation and irradiation as well as for ion beam analysis, such as Rutherford Backscattering Spectroscopy(RBS) and channeling. Based on the experimental requirements, a high temperature irradiation system was established, with the highest temperature of 950 ℃. In order to achieve more accurate ion implantation, two Faraday cup structures, direct type and indirect type, are designed. The scanning area of the beam is controlled accurately. These designs can not only suppress the secondary electrons, the influence of secondary positive ions is also considered when measuring the beam intensity. The ion implantation experiments of Au ions with different energy on single crystal silicon were carried out. RBS analysis shows that the error between the measured fluence and the expected fluence is within 4%. In addition, the uniformity measurement shows that the relative standard deviation of the implant fluence is 2%. |
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