Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation |
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| Authors: | Wang Yang-Yuan Guo Hui Wang Yue-Hu Zhang Yu-Ming Qiao Da-Yong Zhang Yi-Men |
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| Affiliation: | Microelectronics School, Xidian University, Xi'an 710071, China and Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xi'an 710072, China |
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| Abstract: | By formation of an intermediate semiconductor layer (ISL) with anarrow band gap at the metallic contact/SiC interface, this paperrealises a new method to fabricate the low-resistance Ohmic contactsfor SiC. An array of transfer length method (TLM) test patterns isformed on N-wells created by P+ ion implantation intoSi-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmiccontacts to n-type 4H-SiC could be formed by using Germanium ionimplantation into SiC. The specific contact resistance ρc as low as 4.23× 10-5~Ωega cdotcm2 isachieved after annealing in N2 at 800~°C for 3~min,which is much lower than that (>900~°C) in the typical SiCmetallisation process. The sheet resistance Rsh of theimplanted layers is 1.5~kΩega /Box. The technique forconverting photoresist into nanocrystalline graphite is used toprotect the SiC surface in the annealing after Ge+ ionimplantations. |
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| Keywords: | SiC Ohmic contact Ge ionimplantation intermediate semiconductor layer |
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