|
|||||
|
|
Study on the spectral response of the Schottky photodetector of GaN |
|
| Authors: | He Zheng Kang Yong Tang Ying-Wen Li Xue Fang Jia-Xiong |
| Affiliation: | State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Graduates School of Chinese Academy of Sciences, Beijing 100039, China |
| Abstract: | The Schottky photodetector was fabricated on GaN epilayers grown bymetalorganic chemical vapour deposition (MOCVD). The spectral response of theSchottky photodetector was characterized. A new model is proposed tointerpret the characteristic of the spectral response curve of the Schottkyphotodetectors by introducing a penetrating distance of an incident light ata certain wavelength in the current continuity equation and the interfacerecombination at the metal--semiconductor rectifying contact. The expressionsfor the spectral response of the Schottky photodetector are deduced and usedsuccessfully to fit the experimental data. |
| Keywords: | spectral response Schottky photodetector GaN |
| 本文献已被 维普 等数据库收录！ | |
| 点击此处可从《中国物理》浏览原始摘要信息 | |
| 点击此处可从《中国物理》下载免费的PDF全文 | |