| 基于熔融玻璃的预沉积法生长毫米级单晶MoS2及WS2-MoS2异质结 |
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| 引用本文： | 费翔,张秀梅,付泉桂,蔡正阳,南海燕,顾晓峰,肖少庆. 基于熔融玻璃的预沉积法生长毫米级单晶MoS2及WS2-MoS2异质结[J]. 物理学报, 2022, 0(4): 260-266 |
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| 作者姓名： | 费翔 张秀梅 付泉桂 蔡正阳 南海燕 顾晓峰 肖少庆 |
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| 作者单位： | 江南大学电子工程系;江南大学理学院 |
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| 基金项目： | 国家自然科学基金项目(批准号:62074070,62104084,11704159);江苏省自然科学基金项目(批准号:BK20170167);中央高校基本科研业务费专项资金资助项目(批准号:JUSRP221015)资助的课题. |
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| 摘 要： | MoS2是一种具有优异光电性能和奇特物理性质的二维材料,在电子器件领域具有巨大的应用潜力.高效可控生长出大尺寸单晶MoS2是该材料进入产业应用所必须克服的重大难关,而化学气相沉积技术被认为是工业化生产二维材料的最有效手段.本文介绍了一种利用磁控溅射预沉积钼源至熔融玻璃上,通过快速升温的化学气相沉积技术生长出尺寸达1 mm的单晶MoS2的方法,并通过引入WO3粉末生长出了二硫化钼与二硫化钨的横向异质结(WS2-MoS2).拉曼和荧光光谱仪测试表明所生长的样品具有较好的晶体质量.利用转移电极技术制备出了背栅器件样品并对其进行了电学测试,在室温常压下开关比可达10~5,迁移率可达4.53 cm~2/(V·s).这种低成本高质量的大尺寸材料生长方法为二维材料电子器件的大规模应用找到了出路.
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| 关 键 词： | 二硫化钼 熔融玻璃 化学气相沉积 异质结 |
Milimeter-level MoS2 monolayers and WS2-MoS2 heterojunctions grown on molten glass by pre-chemical vapor deposition |
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| Fei Xiang,Zhang Xiu-Mei,Fu Quan-Gui,Cai Zheng-Yang,Nan Hai-Yan,Gu Xiao-Feng,Xiao Shao-Qing. Milimeter-level MoS2 monolayers and WS2-MoS2 heterojunctions grown on molten glass by pre-chemical vapor deposition[J]. Acta Physica Sinica, 2022, 0(4): 260-266 |
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| Authors: | Fei Xiang Zhang Xiu-Mei Fu Quan-Gui Cai Zheng-Yang Nan Hai-Yan Gu Xiao-Feng Xiao Shao-Qing |
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| Affiliation: | (Internet of Things Application Technology Engineering Research Center,Ministry of Education,Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China;Department of Optoelectronic Information Science and Engineering,School of Science,Jiangnan University,Wuxi 214122,China) |
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| Abstract: | Molybdenum disulfide(MoS2),as a kind of two-dimensional(2D)material with novel physical properties and excellent electrical performances,has great potential applications in electronic devices.Efficient and controllable growth of large-size single crystal MoS2 is a major difficulty that must be overcome towards scalable production.Chemical vapor deposition(CVD)is considered as the most promising means for industrial production of 2D materials.Here in this work,the high-quality and millimeter-level single crystal MoS2monolayer grows on molten glass by the pre-chemical vapor deposition,in which MoO3 film deposited on the molten glass is used as Mo precursor instead of MoO3 powder.In addition,by introducing WO3 powder into such a CVD system,MoS2-WS2 lateral heterojunctions can also be obtained.Raman and PL measurements indicate that the as-grown MoS2 monolayer samples possess high quality.The Back-gate FETs are fabricated on SiO2/Si substrates by using transferring elelctrode methods to investigate the electrical properties of the as-grown MoS2 crystals.At room temperature and atmosphere pressure,the on-off ratio can reach 105 and the carrier mobility can arrive at 4.53 cm2/(V·s).The low-cost and high-quality large-size material growth method pave the way for the scalable production of such a 2D material based electronic devices. |
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| Keywords: | MoS2 molten glass CVD heterojunction |
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