| Gallium Nitride Room Temperature α Particle Detectors |
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| 作者姓名： | 陆敏 张国光 付凯 于国浩 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 10875084, the Natural Science Foundation of Jiangsu Province under Grant No BK2008174, the Applied Science Foundation of Suzhou under Grant No SYJG0915, and the National Basic Research Program of China under Grant No G2009CB929300. |
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| 摘 要： | Gallium Nitride （GaN） room temperature α particle detectors are fabricated and characterized, whose device structure is Schottky diode. The current-voltage （I- V） measurements reveal that the reverse breakdown voltage of the detectors is more than 200 V owing to the consummate fabrication processes, and that the Schottky barrier and ideal factor of the detectors are 0.64 eV and 1.02, respectively, calculated from the thermionic transmission model. ^241Am α particles pulse height spectra from the GaN detectors biased at -8 V is obviously one Gauss peak located at channel 44 with the full width at half maximum （FWHM） of 15.87 in channel. One of the main reasons for the relatively wider FWHM is that the air between the detectors and isotope could widen the spectrum.
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| 关 键 词： | α粒子探测器 氮化镓 室温 氮化物 反向击穿电压 肖特基二极管 肖特基势垒 热传递模型 |
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