Potential‐inserted quantum well design for quantum cascade terahertz lasers |
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| Authors: | R. Benchamekh J.‐M. Jancu P. Voisin |
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| Affiliation: | 1. +353‐2‐12346710;2. Tyndall National Institute, Lee Maltings, Cork, Ireland;3. FOTON, Université Européenne de Bretagne, INSA‐Rennes and CNRS, Rennes, France;4. Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris‐Sud et Université Paris‐Saclay, Marcoussis, France |
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| Abstract: | We report on a new design of terahertz quantum cascade laser based on a single, potential‐inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight‐binding calculations, and performances are compared to that of the classical three‐well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature‐independent contrast between phonon‐induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature. |
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| Keywords: | quantum cascade lasers terahertz quantum wells tight‐binding model GaAs/AlAs |
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