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Growth mechanism of InGaN nanodots on three‐dimensional GaN structures
Authors:Donghwy Park  Daehong Min  Okhyun Nam
Affiliation:Department of Nano‐Optical Engineering, Convergence Center for Advanced Nano‐Semiconductor (CANS), Korea Polytechnic University (KPU), Siheung‐si, Gyeonggi‐do, Republic of Korea
Abstract:
Keywords:growth mechanism  InGaN  nanodots  three‐dimensional GaN structures
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