| Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma |
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| 引用本文： | 叶超 俞笑竹 王婷婷 宁兆元 辛煜 江美福. Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma[J]. 中国物理快报, 2005, 22(10): 2670-2673 |
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| 作者姓名： | 叶超 俞笑竹 王婷婷 宁兆元 辛煜 江美福 |
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| 作者单位： | [1]School of Physics Science and Technology, Key Laboratory of Thin Films, Soochow University, Suzhou 215006 |
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| 基金项目： | Supported by the Foundation of Doctoral Dissertation of Soochow University and the Foundation of Key Laboratory of Thin Films of Jiangsu Province. |
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| 摘 要： | We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by de- camethylcyclopentasiloxane （DMCPS） electron cyclotron resonance plasma. The dielectric constant k is closely related to the configurations of films. For the films deposited only using DMCPS, the minimum k is as low as 2.88. By adding CH4 in the precursor, the k value can be reduced to 2.45 due to the film density decreasing by incorporating large size CHx groups. By adding CHF3 in the precursor, the k value can also be reduced to 2.48 due to the incorporation of the weak-polarization F atom. Thus the dielectric constant for SiCOH films depends on not only the film density but also the polarization of atoms. By increasing the film density or by reducing the polarization of atoms under the condition of a lower film density, the low dielectric constant SiCOH films can be obtained.
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| 关 键 词： | SiCOH 薄膜 电介质 杂质沉积 电子回旋加速器 |
| 收稿时间： | 2005-06-07 |
| 修稿时间： | 2005-06-07 |
Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma |
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| Xie Chao;Yu XiaoZhu;Wang TingTing;Ning ZhaoYuan;Xin Yu;Jiang MeiFu. Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma[J]. Chinese Physics Letters, 2005, 22(10): 2670-2673 |
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| Authors: | Xie Chao Yu XiaoZhu Wang TingTing Ning ZhaoYuan Xin Yu Jiang MeiFu |
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