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Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers |
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| Authors: | XU Zhang-Cheng ZHANG Ya-Ting Jø rn M. Hvam Yoshiji Horikoshi |
| Affiliation: | Nano-photonics Group, Key Laboratory of Weak-Light Nonlinear Photonics Materials (MOE), TEDA College, Nankai University, Tianjin 300457Department of Communications, Optics and Materials, and Nano.DTU, Technical University of Denmark, DK-2800 Lyngby, DenmarkSchool of Science & Engineering, Waseda University, Sinjuku-Ku, Tokyo 169-8555, Japan |
| Abstract: | The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant Förster energy transfer between the wetting layer states at elevated temperatures. |
| Keywords: | 73.63.Kv 78.67.-n 78.55.Cr 73.40.Gk 78.55.-m |
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