| 非对称结构大功率940 nm量子阱激光器 |
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| 引用本文： | 蒋锴, 李沛旭, 张新, 等. 非对称结构大功率940 nm量子阱激光器[J]. 强激光与粒子束, 2014, 26: 051022. doi: 10.11884/HPLPB201426.051022 |
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| 作者姓名： | 蒋锴 李沛旭 张新 汤庆敏 夏伟 徐现刚 |
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| 作者单位： | 1.晶体材料国家重点实验室山东大学, 济南 2501 00;;;2.山东华光光电子有限公司, 济南 2501 01 |
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| 摘 要： | 为改善940 nm大功率InGaAs/GaAs半导体激光器输出特性，通过模拟计算了非对称波导层及限制层结构的光场分布，并参照模拟制作了非对称结构半导体激光器器件。采用低压金属有机物气相沉积（LP-MOCVD）生长技术，获得了低内吸收系数的高质量外延材料，通过实验数据计算得到激光器材料内吸收系数仅为0.44 mm-1。进而通过管芯工艺制作了条宽100 m、腔长2000 m的940 nm半导体激光器器件。25 ℃室温10 A直流连续（CW）测试镀膜后器件阈值电流251 mA，斜率效率1.22 W/A，最大输出功率达到9.6 W，最大光电转化效率超过70%。
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| 关 键 词： | 量子阱激光器 大功率 非对称结构 InGaAs/GaAs 金属有机物化学气相沉积 |
| 收稿时间： | 2013-09-22 |
| 修稿时间： | 2014-02-26 |
High power 940 nm quantum well laser with asymmetric structure |
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| Jiang Kai, Li Peixu, Zhang Xin, et al. High power 940 nm quantum well laser with asymmetric structure[J]. High Power Laser and Particle Beams, 2014, 26: 051022. doi: 10.11884/HPLPB201426.051022 |
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| Authors: | Jiang Kai Li Peixu Zhang Xin Tang Qingmin Xia Wei Xu Xiangang |
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| Affiliation: | 1. State Key Laboratory of Crystal Material Shandong University,Jinan 250100,China;;;2. Shandong Huaguang Optoelectronics Co Ltd,Jinan 250101,China |
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| Abstract: | In order to improve the performance of the general broad area high power 940 nm InGaAs/GaAs semiconductor laser diode (LD), we design a new type quantum well LD with an asymmetric waveguide and cladding structure. High material quality with low internal loss of 0.44 mm-1 has been achieved using low pressure metal organic chemical vapor deposition (LP-MOCVD) method. Broad-area lasers were fabricated with the wafers grown on GaAs substrates. For the 940 nm devices with 100 m-wide stripe and 2000 m-long cavity under 25 ℃ continuous wave (CW) operation condition of 10 A, the typical threshold current is 251 mA, the slope efficiency is 1.22 W/A , and the maximum output power reaches 9.6 W. The laser diode yielded a maximum power conversion efficiency over 70%. |
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| Keywords: | quantum well laser high power asymmetric structure InGaAs GaAs metal organic chemical vapor deposition |
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