Detailed balance limit efficiency of silicon intermediate band solar cells |
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| Authors: | Cao Quan Ma Zhi-Hu Xue Chun-Lai Zuo Yu-Hua Wang Qi-Ming |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC), which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration, improving greatly than 40.7% of the Shockley—Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the silicon-based solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV, and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%, having a better potential. |
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| Keywords: | intermediate band silicon solar cell concentrated light detailed balance principle |
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