A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser |
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| Authors: | Guan Bao-Lu Ren Xiu-Juan Li Chuan Li Shuo Shi Guo-Zhu Guo Xia |
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| Affiliation: | Opto-electronic Devices Research Laboratory, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current. |
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| Keywords: | vertical-cavity surface-emitting laser strained quantum-well oxide confinement |
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