| 基于POLO钝化接触结构的晶硅电池技术及其研究进展 |
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| 引用本文： | 张天杰,屈小勇,郭永刚,吴翔,高嘉庆,张博,杨爱静,刘军保,李跃恒,林涛. 基于POLO钝化接触结构的晶硅电池技术及其研究进展[J]. 人工晶体学报, 2022, 51(6): 1122-1131 |
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| 作者姓名： | 张天杰 屈小勇 郭永刚 吴翔 高嘉庆 张博 杨爱静 刘军保 李跃恒 林涛 |
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| 作者单位： | 青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安 710100;西安理工大学自动化与信息工程学院,西安 710048 |
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| 摘 要： | 多晶硅氧化物(POLO)结构是在晶硅表面依次生长一层极薄的界面氧化层与多晶硅层所形成的钝化接触结构。基于POLO结构的钝化接触技术不仅能够获得优异的表面钝化特性,而且避免了金属与晶硅表面的直接接触,极大地降低了金属与晶硅表面的接触复合。目前应用POLO钝化接触结构制作的小面积晶硅太阳能电池转换效率高达26.1%,制作的大面积晶硅太阳能电池产业化效率已经超过24.5%。同时POLO钝化接触技术应用于晶硅电池的制作可以承受高温工艺,兼容现有的晶硅电池产业化设备,是未来极具产业化潜力的钝化接触技术方案。本文主要综述了POLO钝化接触结构中载流子的传输机理及相应的量化参数表征方法;对比了POLO结构制备中界面氧化层生长、多晶硅层的沉积、掺杂及氢化处理的方法;总结了多晶硅层的寄生吸收效应、晶硅表面形貌结构、掺杂浓度分布对POLO结构钝化接触特性的影响;简述了POLO钝化接触技术的研究进展及当前POLO电池制作面临的技术难点。
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| 关 键 词： | 钝化接触 载流子选择性接触 多晶硅氧化物(POLO) POLO结构 多晶硅 晶硅电池 |
| 收稿时间： | 2022-01-07 |
Crystalline Silicon Cells Technology Based on POLO Passivation Contact Structure and Its Research Progress |
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| ZHANG Tianjie,QU Xiaoyong,GUO Yonggang,WU Xiang,GAO Jiaqing,ZHANG Bo,YANG Aijing,LIU Junbao,LI Yueheng,LIN Tao. Crystalline Silicon Cells Technology Based on POLO Passivation Contact Structure and Its Research Progress[J]. Journal of Synthetic Crystals, 2022, 51(6): 1122-1131 |
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| Authors: | ZHANG Tianjie QU Xiaoyong GUO Yonggang WU Xiang GAO Jiaqing ZHANG Bo YANG Aijing LIU Junbao LI Yueheng LIN Tao |
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| Affiliation: | 1. Qinghai Huanghe Hydropower Development Co., Ltd., Xi’an Solar Power Branch, Xi’an 710100, China; 2. College of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China |
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| Abstract: | Poly-Si on oxide (POLO) structure is a passivation contact structure formed by growing a polysilicon layer on an extremely thin interface oxide layer based on the surface of the crystalline silicon. The passivation contact technology based on the POLO structure can not only obtain excellent surface passivation characteristics, but also avoid direct contact between the metal and the crystalline silicon surface, and greatly reduce the contact recombination of the metal and the crystalline silicon surface. At present, the conversion efficiency of small-area crystalline silicon solar cells made with POLO passivation contact structure is as high as 26.1%, and the industrialization efficiency of large-area crystalline silicon solar cells has exceeded 24.5%. At the same time, the POLO passivation contact technology applied to the production of crystalline silicon cells can withstand high-temperature processes and is compatible with existing crystalline silicon cell industrialization equipment. It is a passivation contact technology solution with great industrialization potential in the future. This paper mainly reviews the carrier transport mechanism in the POLO passivation contact structure and the corresponding quantitative parameter characterization methods. The methods of interfacial oxide layer growth, polysilicon layer deposition, doping and hydrogenation treatment in the preparation of POLO structure are compared. The parasitic absorption effect of the polysilicon layer, the morphological structure of the crystalline silicon surface, and the influence of the doping concentration distribution on the passivation contact characteristics of the POLO structure are summarized. The research progress of the POLO passivation contact technology and the difficulties in POLO solar cells production are briefly described. |
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| Keywords: | passivation contact carrier selective contact poly-Si on oxide(POLO) POLO sturcture poly-Si crystalline silicon cell |
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