Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application |
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| Authors: | Wuwei Feng Xiao Fu Caihua Wan Zhonghui Yuan Xiufeng Han Nguyen Van Quang Sunglae Cho |
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| Affiliation: | 1. School of Materials Science and Technology, China University of Geosciences, Beijing, P.R. China;2. Institute of Physics, Chinese Academy of Sciences, Beijing National Lab of Condensed Matter Physics, Beijing, P.R. China;3. Department of Physics, University of Ulsan, Ulsan, South Korea |
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| Abstract: | A novel Heusler ferrimagnet Ti2MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti2MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti2MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti2MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | Ti2MnAl spin gapless semiconductors spintronics Heusler compounds |
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