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10 W级主控振荡放大半导体激光芯片封装实验研究
引用本文:谢鹏飞,雷军,张永刚,王丞乾,吕文强,王昭,杜维川,高松信. 10 W级主控振荡放大半导体激光芯片封装实验研究[J]. 强激光与粒子束, 2023, 35(5): 051001-1-051001-5. DOI: 10.11884/HPLPB202335.220235
作者姓名:谢鹏飞  雷军  张永刚  王丞乾  吕文强  王昭  杜维川  高松信
作者单位:1.中国工程物理研究院 高能激光科学与技术重点实验室,四川 绵阳 621900
摘    要:结温升高是影响主控振荡放大(MOPA)半导体激光芯片输出功率的重要因素,为解决MOPA芯片的多电极封装和高效散热问题,提出了一种正装和热扩散辅助次热沉相结合的封装结构。建立了该封装结构的3D热模型,对比研究了倒装封装结构、正装无辅助次热沉结构与正装有辅助次热沉结构对MOPA半导体激光器结温的影响。计算结果表明,采用正装有辅助次热沉结构与倒装封装结构散热性能接近,且显著优于正装无辅助次热沉结构,结温降低幅度最高可达40%。另外,采用正装有辅助次热沉封装结构的MOPA半导体激光芯片在连续工作条件下输出功率为10.5 W,谱宽可实现半高全宽小于0.1 nm,中心波长随电流的变化约14 pm/A,实现了10 W级MOPA芯片的封装,验证了该封装结构的有效性。

关 键 词:锥形半导体激光器  热设计  封装结构  热沉
收稿时间:2022-07-27

Study of packaging in master oscillator power amplifier diode laser chip
Affiliation:1.Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang 621900, China2.Institute of Applied Electronics, CAEP, Mianyang 621900, China
Abstract:The increase in junction temperature is an important factor affecting the output power of master oscillator power amplifier (MOPA) diode laser chip. To achieve the packaging and efficient heat dissipation of the multi-electrode MOPA semiconductor laser chip, a packaging structure that combining P-side up with heat spreader was proposed. An analytical three-dimensional thermal model was employed to study the influence on junction temperature between the P-side down, P-side up without heat spreader and P-side up with heat spreader. According to the three-dimensional thermal model, the conduction-cooled capability between P-side up with heat spreader and P-side down is uniform in this paper. Moreover, the packaging can lead to a maximal 40% decrease on junction temperature. By the way, the P-side up with heat spreader structure was used in MOPA diode laser chip in experiment then 10.5 W output power and the spectrum width (FWHM)<0.1 nm of the MOPA chip were obtained in CW mode.
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