| InGaAs Photodetectors Cut-off at 1.9μm Grown by Gas-Source Molecular Beam Epitaxy |
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| 作者姓名： | 张永刚 郝国强 顾溢 朱诚 李爱珍 刘天东 |
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| 作者单位： | StateKeyLaboratoryofFunctionalMaterialsforInformatics,ShanghaiInstituteofMicrosystemandInformationTechnology,ChineseAcademyofSciences,Shanghai200050 |
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| 摘 要： | Using a linear graded Inx Ga1-xAs as the buffer layer, positive-intrinsic-negative wavelength-extended In0.6 Ga0.4As photodetectors with 50% cut-off wavelength of 1.9μm at room temperature were grown by using gas-source molecular beam epitaxy, and their performance over a wide temperature range has been extensively investigated. The detectors show typical dark current at bias voltage 50mV and the resistance-area product R0A of 7nA/765Ωcm^2 and 31pA/404kΩcm^2 at 290K and 210K, respectively. The thermal activation energy of the dark current in the temperature range 250-350K is 0.488 eV.
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| 关 键 词： | InGaAs 光电探测器 气体源 分子束 晶体外延附生 |
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