Binding energy of the donor impurities in GaAs-Ga_(1-x)Al_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields |
| |
| Authors: | Esra Aciksoz Orhan Bayrak Asim Soylu |
| |
| Affiliation: | 1.Department of Physics, Akdeniz University, 07058, Antalya, Turkey;2.Department of Physics, Nigde University, 51240, Nigde, Turkey |
| |
| Abstract: | The behavior of a donor in the GaAs-Ga1-xAlxAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters (De, re, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential. |
| |
| Keywords: | Morse potential electric field magnetic field the donor atom quantum well wire |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
