Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap |
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| Authors: | Mohsen Mahmoudi Zahra Ahangari Morteza Fathipour |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran;2. Young Researchers and Elite Club, Yadegar-e-Imam Khomeini (RAH) Shahre-Rey Branch, Islamic Azad University, Tehran, Iran |
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| Abstract: | ![]()
The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor(DG ASi NR FET)are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green's function(NEGF) approach self-consistently coupled with a three-dimensional(3D) Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASi NR FET. A novel two-parameter strain magnitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing Hf O2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance.Furthermore, a general model power(GMP) is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASi NR under strain. |
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| Keywords: | silicene double-gate field-effect-transistor non-equilibrium Green' s function tight binding |
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