Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment |
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| Affiliation: | 1.Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;2.School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China |
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| Abstract: | In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer(SEM/EDS) method and x-ray photoelectron spectroscopy(XPS) method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain current of 610 mA/mm at the gate bias of 4 V.Meanwhile,the on/off current ratio of enhancement-mode HEMT was as high as 10~8,drain induced barrier lowering(DIBL) was as low as 5 raV/V,and subthreshold swing(SS) of 80 mV/decade was obtained.Compared with the conventional HEMT,the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower,and the off-state breakdown voltage of which was higher.In addition,a power gain cutoff frequency(/max) of the enhancement-mode HEMT was larger than that of the conventional one. |
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| Keywords: | AlGaN/GaN high electron mobility transistors recessed-gate oxygen plasma |
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