Characteristics of cylindrical surrounding-gate GaAs_xSb_(1-x)/In_yGa_(1-y)As heterojunction tunneling field-effect transistors |
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| Affiliation: | Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China |
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| Abstract: | A III-V heterojunction tunneling field-effect transistor (TFET) can enhance the on-state current effectively, and GaAsxSb1-x/InyGa1-yAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition. In this paper, the performance of the cylindrical surrounding-gate GaAsxSb1-x/InyGa1-yAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation. We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing (SS), while increasing source doping concentration and adjusting the composition of GaAsxSb1-x/InyGa1-yAs can improve the on-state current. In addition, the resonant TFET based on GaAsxSb1-x/InyGa1-yAs is also studied, and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current, respectively, and is much superior to the conventional TFET. |
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| Keywords: | tunneling field-effect transistor surrounding-gate subthreshold swing resonant tunneling |
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