Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co_2MnSi/graphene/n-Ge junction |
| |
| Affiliation: | School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China |
| |
| Abstract: | We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. |
| |
| Keywords: | Co2MnSi/graphene/n-Ge junction Fermi-level depinning Schottky barrier height metal-induced gap states (MIGS) |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
