Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes |
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| Authors: | Guo Wei-Ling Yan Wei-Wei Zhu Yan-Xu Liu Jian-Peng Ding Yan Cui De-Sheng and Wu Guo-Qing |
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| Affiliation: | Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | ![]()
In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized. |
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| Keywords: | high-voltage light-emitting diode electrical characteristics ideality factor series resis-tance |
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