| Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films |
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| 引用本文： | 薛守斌 庄惠照 薛成山 胡丽君. Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films[J]. 中国物理快报, 2006, 23(11): 3055-3057 |
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| 作者姓名： | 薛守斌 庄惠照 薛成山 胡丽君 |
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| 作者单位： | Institute of Semiconductors, Shandong Normal University, Jinan 250014 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 90201025 and 90201002. |
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| 摘 要： | Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.
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| 关 键 词： | GaN纳米棒 氨化合Ga2O3/ZnO薄膜 薄膜物理学 石英管 |
| 收稿时间： | 2006-07-27 |
| 修稿时间： | 2006-07-27 |
Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films |
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| XUE Shou-Bin, ZHUANG Hui-Zhao,XUE Cheng-Shan, HU Li-Jun. Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films[J]. Chinese Physics Letters, 2006, 23(11): 3055-3057 |
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| Authors: | XUE Shou-Bin ZHUANG Hui-Zhao XUE Cheng-Shan HU Li-Jun |
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| Affiliation: | Institute of Semiconductors, Shandong Normal University, Jinan 250014 |
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