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AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template |
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| Authors: | SANG Li-Wen QIN Zhi-Xin CEN Long-Bin SHEN Bo ZHANG Guo-Yi LI Shu-Ping CHEN Hang-Yang LIU Da-Yi KANG Jun-Yong CHENG Cai-Jing ZHAO Hong-Yan LU Zheng-Xiong DING Jia-Xin ZHAO Lan SI Jun-Jie SUN Wei-Guo |
| Affiliation: | State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Research Center for Wide Gap Semiconductor, School of Physics, Peking University, Beijing 100871Department of Physics and Photonics Research Center, Xiamen University, Xiamen 361005Luoyang Optoelectronic Institute, Luoyang 471009 |
| Abstract: | We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff-wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1i×10-6A/cm2 at the reversebias of 5V. The specific detectivity D* is estimated to be 3.3×1012cmHz1/2W-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current. |
| Keywords: | 73.40.Kp 85.60.Gz 81.05.Ea |
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