| Monto Carlo simulation of the behaviour of electrons during electron—assisted chemical vapour deposition of diamond |
| |
| 引用本文： | 董丽芳,陈俊英,董国义,尚勇. Monto Carlo simulation of the behaviour of electrons during electron—assisted chemical vapour deposition of diamond[J]. 中国物理, 2002, 11(5): 419-424. DOI: 10.1088/1009-1963/11/5/302 |
| |
| 作者姓名： | 董丽芳 陈俊英 董国义 尚勇 |
| |
| 作者单位： | (1)College of Physics Science and Technology, Hebei University, Baoding 071002, China; (2)Natural Science Foundation of Hebei Province, Shijiazhuang 050021, China |
| |
| 基金项目： | Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 502121). |
| |
| 摘 要： | The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2. Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.
|
| 关 键 词： | 金刚石薄膜 化学汽相沉积 Monte Carlo模拟 |
| 收稿时间： | 2001-09-23 |
Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond |
| |
| Dong Li-Fang,Chen Jun-Ying,Dong Guo-Yi and Shang Yong. Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond[J]. Chinese Physics, 2002, 11(5): 419-424. DOI: 10.1088/1009-1963/11/5/302 |
| |
| Authors: | Dong Li-Fang Chen Jun-Ying Dong Guo-Yi Shang Yong |
| |
| Affiliation: | College of Physics Science and Technology, Hebei University, Baoding 071002, China; Natural Science Foundation of Hebei Province, Shijiazhuang 050021, China |
| |
| Abstract: | The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2. Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment. |
| |
| Keywords: | Monte Carlo method chemical vapour deposition electron swarm drift velocity |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
