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Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures |
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| Authors: | Zhao Jian-Zhi Lin Zhao-Jun Timothy D Corrigan Zhang Yu Lü Yuan-Jie Lu Wu Wang Zhan-Guo Chen Hong |
| Affiliation: | Beijing National Laboratory for Condensed Matter Physics,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Department of Electrical Engineering, The Ohio StateUniversity, Columbus, Ohio 43210, USA; Department of Physics, University of Maryland, CollegePark, MD 20740, USA; Laboratory of Semiconductor Materials Science, Instituteof Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (5)School of Physics, Shandong University, Jinan 2 |
| Abstract: | Using the measured capacitance-voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure,the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving Schrdinger’s and Poisson’s equations.It is shown that the calculated values of the relative permittivity are different from those formerly reported,and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity.As the reverse bias increases from 0 V to-3 V,the value of the relative permittivity decreases from 7.184 to 7.093. |
| Keywords: | relative permittivity AlGaNbarrier layer AlGaN/GaN heterostructures |
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