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硒化亚铜薄膜热电性能研究进展
引用本文:杨亮亮,秦源浩,魏江涛,宋培帅,张明亮,杨富华,王晓东. 硒化亚铜薄膜热电性能研究进展[J]. 物理学报, 2021, 0(7): 1-14
作者姓名:杨亮亮  秦源浩  魏江涛  宋培帅  张明亮  杨富华  王晓东
作者单位:中国科学院半导体研究所半导体集成技术工程研究中心;中国科学院大学微电子学院及材料与光电研究中心;北京量子信息科学研究院;北京市半导体微纳集成工程技术研究中心
基金项目:国家重点研发计划(批准号:2019YFB1503602,2018YFB1107502);中国科学院先导B项目(批准号:XDB43020500);中国科学院科研仪器设备研制项目(批准号:GJJSTD20200006)资助的课题.
摘    要:热电材料可以实现热能和电能的相互转换,它是一种环境友好的功能性材料.当前,热电材料的热电转换效率低,这严重制约了热电器件的大规模应用,因此寻找更加优异热电性能的新材料或提高传统热电材料的热电性能成为热电研究的主题.与块状材料相比,薄膜具有二维的宏观性质和一维的纳米结构特性,方便研究材料的物理机制与性能的关系,还适用于制...

关 键 词:热电  Cu2Se薄膜  薄膜制备  柔性热电

Research progress of Cu2Se thin film thermoelectric properties
Yang Liang-Liang,Qin Yuan-Hao,Wei Jiang-Tao,Song Pei-Shuai,Zhang Ming-Liang,Yang Fu-Hua,Wang Xiao-Dong. Research progress of Cu2Se thin film thermoelectric properties[J]. Acta Physica Sinica, 2021, 0(7): 1-14
Authors:Yang Liang-Liang  Qin Yuan-Hao  Wei Jiang-Tao  Song Pei-Shuai  Zhang Ming-Liang  Yang Fu-Hua  Wang Xiao-Dong
Affiliation:(Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Microelectronics and Research Center of Materials and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Institute of Quantum Information Science,Beijing 100193,China;Beijing Semiconductor Micro/Nano Integrated Engineering Technology Research Center,Beijing 100083,China)
Abstract:Thermoelectric(TE)materials can directly realize the mutual conversion between heat and electricity,and it is an environmentally friendly functional material.At present,the thermoelectric conversion efficiencies of thermoelectric materials are low,which seriously restricts the large-scale application of thermoelectric devices.Therefore,finding new materials with better thermoelectric properties or improving the thermoelectric properties of traditional thermoelectric materials has become the subject of thermoelectric research.Thin film materials,compared with bulk materials,possess both the two-dimensional macroscopic properties and onedimensional nanostructure characteristics,which makes it much easier to study the relationships between physical mechanisms and properties.Besides,thin film are also suitable for the preparation of wearable electronic devices.This article summarizes five different preparation methods of Cu2Se thin films,i.e.electrochemical deposition,thermal evaporation,spin coating,sputtering,and pulsed laser deposition.In addition,combing with typical examples,the characterization methods of the film are summarized,and the influence mechanism of each parameter on the thermoelectric performance from electrical conductivity,Seebeck coefficient and thermal conductivity is discussed.Finally,the hot application direction of Cu2Se thin film thermoelectrics is also introduced.
Keywords:thermoelectric  Cu2Se thin film  thin film preparation  flexible thermoelectric
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