|
|||||
|
|
A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation |
|
| Authors: | MENG Xiang-Ti HUANG Qiang MA Yan-Xiu ZHENG Yong-Nan FAN Ping ZHU Sheng-Yun |
| Abstract: | The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109to 4×1010 cm-2and 1×109 to 2×1012 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×1010 and 2×1012 cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program. |
| Keywords: | semiconductor technology CMOS image sensor proton irradiation average brightness TRIM simulation |
| 本文献已被 万方数据 等数据库收录！ | |
| 点击此处可从《中国物理C(英文版)》浏览原始摘要信息 | |
| 点击此处可从《中国物理C(英文版)》下载免费的PDF全文 | |