| Ionizing Dose Effect of Thermal Oxides Implanted with Si^＋ Ions |
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| 引用本文： | 陈明 罗宏伟 张正选 张恩霞 杨慧 田浩 王茹 俞文杰. Ionizing Dose Effect of Thermal Oxides Implanted with Si^＋ Ions[J]. 中国物理快报, 2007, 24(6): 1775-1777 |
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| 作者姓名： | 陈明 罗宏伟 张正选 张恩霞 杨慧 田浩 王茹 俞文杰 |
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| 作者单位： | [1]Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100039 [3]CEPREI, Cuangzhou 510610 |
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| 摘 要： | Total ionizing dose effects of Si^＋ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence （PL） method is engaged to investigate nanostructures of samples. Ar^＋ implanted samples are also studied by the same way to provide a comparison. The results show that Si^＋ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net posi- tive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar^＋ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si^＋ implantation shows little dependence on implant dose of Ar^＋ ions. This is explained by possible increase of recombination centres.
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| 关 键 词： | 电离子 热学 氧化物 重离子 |
| 收稿时间： | 2006-12-05 |
| 修稿时间： | 2006-12-05 |
Ionizing Dose Effect of Thermal Oxides Implanted with Si+ Ions |
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| CHEN Ming,LUO Hong-Wei,ZHANG Zheng-Xuan,ZHANG En-Xia,YANG Hui,TIAN Hao,WANG Ru,YU Wen-Jie. Ionizing Dose Effect of Thermal Oxides Implanted with Si+ Ions[J]. Chinese Physics Letters, 2007, 24(6): 1775-1777 |
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| Authors: | CHEN Ming LUO Hong-Wei ZHANG Zheng-Xuan ZHANG En-Xia YANG Hui TIAN Hao WANG Ru YU Wen-Jie |
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| Affiliation: | Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2 Graduate School of the Chinese Academy of Sciences, Beijing 100039 3 CEPREI, Guangzhou 510610 |
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| Abstract: | Total ionizing dose effects of Si+ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence (PL) method is engaged to investigate nanostructures of samples. Ar+ implanted samples are also studied by the same way to provide a comparison. The results show that Si+ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net positive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar+ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si+ implantation shows little dependence on implant dose of Ar+ ions. This is explained by possible increase of recombination centres. |
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| Keywords: | 87.50.Gi 78.55.-m 78.67.Bf |
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