| Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method |
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| 引用本文： | 邢志刚 王晶 裴晓将 万威 陈弘 周均铭. Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method[J]. 中国物理快报, 2007, 24(8): 2353-2356 |
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| 作者姓名： | 邢志刚 王晶 裴晓将 万威 陈弘 周均铭 |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 10474126, the National Key Basic Research Programme of China under Grant No 2002CB311900, and the National High Technology Programme of China under Grant No 2006AA03A106. |
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| 摘 要： | By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy （CBE）, and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci. Technol. B 23 （2005） 2476]. Here the evolution manner of dlslocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected.
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| 关 键 词： | 位错还原机械论 氮化镐 薄膜 衍生方法 |
| 收稿时间： | 2007-03-28 |
| 修稿时间： | 2007-03-28 |
Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method |
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| XING Zhi-Gang,WANG Jing,PEI Xiao-Jiang,WAN Wei,CHEN Hong,ZHOU Jun-Ming. Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method[J]. Chinese Physics Letters, 2007, 24(8): 2353-2356 |
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| Authors: | XING Zhi-Gang WANG Jing PEI Xiao-Jiang WAN Wei CHEN Hong ZHOU Jun-Ming |
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| Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Abstract: | By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy (CBE), and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci. Technol. B 23 (2005) 2476]. Here the evolution manner of dislocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed.Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected. |
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| Keywords: | 68.37.Lp 61.72.Lk 81.15.Kk |
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