| 一种实现光纤激光器高功率输出的方法 |
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| 引用本文： | 窦汝海,张利平,张菁,石秀梅,陈建国,施鹏程,钱凌轩. 一种实现光纤激光器高功率输出的方法[J]. 强激光与粒子束, 2007, 19(9): 0-1420 |
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| 作者姓名： | 窦汝海 张利平 张菁 石秀梅 陈建国 施鹏程 钱凌轩 |
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| 作者单位： | 1.武汉军械士官学校 光电研究所, 武汉 430075 |
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| 摘 要： | 介绍了一种实现光纤激光器高功率输出的新方法——采用螺旋芯光纤，这种光纤是在光纤制作过程中按照一定的弯曲半径使纤芯呈螺旋状排布在光纤包层中。介绍了这种螺旋芯光纤的原理和其提高输出功率的能力，以及目前的理论与实验研究现状。基于该光纤，提出了一种光纤激光器相干合成新思想。
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| 关 键 词： | 光纤激光器 高功率 螺旋芯光纤 相干合成 |
| 文章编号： | 1001-4322（2007）09-1417-04 |
| 收稿时间： | 2006-11-12 |
| 修稿时间： | 2006-11-12 |
Phase locked broad-stripe diode laser array in an external cavity |
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| DOU Ru-hai,ZHANG Li-ping,ZHANG Jing,SHI Xiu-mei,CHEN Jian-guo,SHI Peng-cheng,QIAN Ling-xuan. Phase locked broad-stripe diode laser array in an external cavity[J]. High Power Laser and Particle Beams, 2007, 19(9): 0-1420 |
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| Authors: | DOU Ru-hai ZHANG Li-ping ZHANG Jing SHI Xiu-mei CHEN Jian-guo SHI Peng-cheng QIAN Ling-xuan |
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| Affiliation: | 1.Opto-Electronics Institute,Wuhan Ordnance Non-Commissioned Officers Academy,Wuhan 430075,China |
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| Abstract: | By using an external cavity,a commercially available broad-stripe semiconductor diode laser array(DLA) has been phase locked.Measurements show that the spectral width of the phase-locked DLA is reduced to 0.16 nm compared to 1.9 nm of the free-running DLA,and the peak wavelength is shifted from 803.8 nm to 805.5 nm.An angular spacing between the lobes of the far field pattern of 1.6 mrad,coincident with the ratio of the wavelength to emitter distance,indicates that the DLA is operated in the fundamental(or highest) super mode.The modulation depth of the peak-valley pattern is measured to be larger than 0.8.It has also been verified that phase locking can be achieved for external cavity length between 1/10 to 1/16 of the Talbot distance zT.Based on experimental facts,it is believed that phase-locking is the result of injection locking.In reference to the injection locking theory of the semiconductor lasers,we described qualitatively the transit process of the DLA from the free-running state to the phase-locked state and predicted that the phase-locked DLA should oscillate at the long wavelength side of the spectrum of the free-running array,which has also been confirmed by experiment. |
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| Keywords: | Semiconductor diode laser array External cavity Phase locking Injection locking |
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