Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes |
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| Authors: | Wang Ding-Qu Zhou Zhao-Ying Zhu Rong Ye Xiong-Ying |
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| Affiliation: | State Key Laboratory of Precision Measurement Technologyand Instruments, Department of Precision Instruments andMechanology,Tsinghua University, Beijing 100084, China |
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| Abstract: | This paper reports on a method of assembling semiconducting ZnOnanowires onto a pair of Au electrodes to construct ametal--semiconductor--metal (MSM) structure by dielectrophoresis andstudying on its electrical characteristics by using current-voltage($I-V$) measurements. An electronic model with two back to backSchottky diodes in series with a semiconductor of nanowires wasestablished to study the electrical transport of the MSM structures.By fitting the measured $I-V$ characteristics using the proposedmodel, the parameters of the Schottky contacts and the resistance ofnanowires could be acquired. The photoelectric properties of the MSMstructures were also investigated by analysing the measurements ofthe electrical transports under various light intensities. Thededuced results demonstrate that ZnO nanowires and their Schottkycontacts with Au electrodes both contribute to photosensitivity andthe MSM structures with ZnO nanowires are potentially applicable forphotonic devices. |
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| Keywords: | ZnO nanowire MSM structure Schottky barrier optoelectronicproperty |
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