| 无平面结敏感区硅光二极管 |
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| 引用本文： | 尹长松,李晓军,谷增云,王林.无平面结敏感区硅光二极管[J].武汉大学学报(理学版),1997(5). |
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| 作者姓名： | 尹长松 李晓军 谷增云 王林 |
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| 作者单位： | 武汉大学物理学系 |
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| 摘 要： | 研制了在平面ＰＮ结内无敏感区的硅光探测器，测量了这种新结构器件的光电转换特性，说明在光照下，器件的光电流不为零值．
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| 关 键 词： | 光敏二极管，小面积PN结，无平面结敏感区光探测器 |
THE PHOTODIODE OF SILICON WITHOUT SENSITIVE AREA IN THE PLANLAR PN JUNCTION |
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| Yin Changsong,Li Xiaojun,Gu Zengyun,Wang Lin.THE PHOTODIODE OF SILICON WITHOUT SENSITIVE AREA IN THE PLANLAR PN JUNCTION[J].JOurnal of Wuhan University:Natural Science Edition,1997(5). |
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| Authors: | Yin Changsong Li Xiaojun Gu Zengyun Wang Lin |
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| Abstract: | The photodetector of silicon without sensitive area in the planar junction has been researched. We measured the photoelectric character of the device. The mode for analysing the character of the device is presented in the work. Using parameters measured in the experiment, the effect sensitive area of the device and the diffusion length of the photogenerated minority carriers in the substrate can be determined. |
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| Keywords: | photodiode small area PN junction the photodetector without sensitive area in the planar junction |
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