首页 | 本学科首页   官方微博 | 高级检索  
     检索      

采用传通管的CMOS存贮元件
引用本文:吴训威 ,F..采用传通管的CMOS存贮元件[J].浙江大学学报(理学版),1988,15(3):374-375.
作者姓名:吴训威  F.
作者单位:美国印第安纳大学计算机系 Prosser
摘    要:The CMOS transmission gate is a typical application of the passtransistor. Two transmission gates with complementary controls can form a1-of-2 multiplexer, as shown in Fig. 1 a. Two special cases are of interestif c_0=0 and c_1=y, the output is x.y, and if c_0=y and c_1=1, the output isx+y. The AND and OR gates arising from these cases are shown in Figs.1 b and 1 c. Where 0 or 1 is transmitted, the unnecessary PMOS or NMOStransistor in the pass path has been omitted. These gates save one MOStransistor in comparison with the traditional scheme of a NAND gate orNOR gate plus an inverter. The inputs are treated asymmetrically in thesegates, yielding an inverse output for one of the inputs. The symbols in Fig1 show the extra output and emphasize the asymmetry.


Novel Cmos Memory Elements Based on Pass Transistors
Abstract:
Keywords:
本文献已被 CNKI 等数据库收录!
点击此处可从《浙江大学学报(理学版)》浏览原始摘要信息
点击此处可从《浙江大学学报(理学版)》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号