基于RTD和HEMT的D触发器设计

共振隧穿二极管(RTD)作为一种新的量子器件和纳米电子器件,具有负内阻、电路功耗低、工作频率高、双稳态和自锁等特性,可突破CMOS工艺尺寸的物理极限,在数字集成电路领域有更为广阔的发展空间.针对RTD的特性,采用3个RTD串联的单双稳态转换逻辑单元(MOBILE)和类SR锁存器,设计了基于RTD和HEMT(高电子迁移率晶体管)的D触发器.较于其他研究的D触发器,该D触发器能有效降低电路的器件数量和复杂度,且能抗S、R信号的延时差异干扰,具有更稳健的输出.

Design of D flip-flop based on RTD and HEMT

The resonant tunneling diode (RTD) as a new quantum device and nano-electronic device, has many attributes, including negative resistance, low power consumption, high frequency, bistability and self-latching. It can be used to break through the physical limits of CMOS process size, and also has a broader space for the development of digital integrated circuit. According to the characteristics of the RTD, a D flip-flop is designed based on RTD and HEMT(high electron mobility transistor). The D flip-flop uses the monostable-bistable transition logic element (MOBILE) with three RTDs in series and the similar SR-latch. Compared with the D flip-flop in other studies, the designed D flip-flop can effectively reduce the device number and complexity of the circuit.What is more, it also can eliminate the interference of delay difference between the signals of S and R with a more robust output.