| 非晶硅碳薄膜LED发光特性简析 |
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| 引用本文： | 周亚训.非晶硅碳薄膜LED发光特性简析[J].宁波大学学报(理工版),1995(3). |
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| 作者姓名： | 周亚训 |
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| 作者单位： | 宁波大学物理系 |
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| 摘 要： | 简要分析具有势垒层结构的非晶硅碳薄膜发光二极管（ａ—ＳｉＣｘ：ＨＴＦＬＥＤ）发光特性，着重于分析外加偏压下载流子的注入和复合过程，理论上得到二极管发光亮度与外加偏压关系，理论分析与实验结果基本一致。
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| 关 键 词： | 势垒层，隧道几率，辐射复合效率，发光亮度 |
A SIMPLE ANALYSIS OF A-SICXtH TFLED LUMINESCENT CHARACTERISTLC |
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| Zhou Yaxun.A SIMPLE ANALYSIS OF A-SICXtH TFLED LUMINESCENT CHARACTERISTLC[J].Journal of Ningbo University(Natural Science and Engineering Edition),1995(3). |
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| Authors: | Zhou Yaxun |
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| Abstract: | The paper gins a simple analysis of a-SiCx:H TILED with barrier layer strcuture, and a focus on analysing the process of carier injection and recombination under applied voltage. Based on these, the relationship between diode luminosity and applied voltage is deduced theoretics, and it is in nearly agreement with the experiment results. |
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| Keywords: | arrier layer tunneling probability radiative recombination efficieluminosity |
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