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Hg2Br2声光器件的换能器带宽和镀层厚度的确定
引用本文:谢本亮.Hg2Br2声光器件的换能器带宽和镀层厚度的确定[J].南昌大学学报(理科版),2003,27(4):394-398.
作者姓名:谢本亮
作者单位:赣南师范学院,科研处,江西,赣州,341000
摘    要:提出用环氧树脂聚合物作为换能器与Hg2Br2声光介质的缓冲层(粘接层),设计Hg2Br2声光器件的换能器。根据换能器等效电路网络分析法,就x切LN/Hg2Br2声光器件的电极层各种金属材料和厚度计算了换能器损耗TL随规一化频率f/fo的变化关系。从声光器件的布喇格带宽和工艺条件出发,优化选择了换能器损耗为3dB范围内的换能器结构、电极层材料及其厚度和压电层厚度,并确保了换能器的倍频程带宽。

关 键 词:Hg2Br2声光器件  换能器  带宽  镀层厚度  电极层
文章编号:1006-0464(2003)04-0394-05
修稿时间:2002年11月23

THE TRANSDUCER BANDWIDTH OF Hg2Br2 ACOUSTO - OPTIC DEVICES AND THE DETERMINATION OF THE LAYERS' THICKNESS
XIE Ben-liang.THE TRANSDUCER BANDWIDTH OF Hg2Br2 ACOUSTO - OPTIC DEVICES AND THE DETERMINATION OF THE LAYERS'''' THICKNESS[J].Journal of Nanchang University(Natural Science),2003,27(4):394-398.
Authors:XIE Ben-liang
Abstract:A method using epoxy resin ploymer as buffer coat between the transducer and Hg_2Br_2 acousto-optic crystal to design the transducer for Hg_2Br_2 AO devices is proposed.According to the equivalent circuit net analysis method,We have calculated the functional relationship between transducer loss TL and normalized frequency f/f_o for the x-cut LN/Hg_2Br_2 AO devices,with different metal layer materials and thickness.From the devices' Brags bandwidth and the technological conditions,the transdacer structure,the electrode layers materials and thickness,the piezoelectric thickness have been optimizod by the range of the 3dB loss transducer.The octave bandwidth of the transducer is ensured.
Keywords:Hg_2Br_2 acousto-optic device  transducer  structure  bandwidth  electrode layers thickness
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