| A Ga_2O·11Al_2O_3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires |
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| 基金项目： | supported by the National Natural Science Foundation of China (Grant Nos. 50821061, 20773001, 20827002);;Ministry of Sceince and Technology of China (2006CB806102, 2007CB936202, 2009CB929403) |
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| 摘 要： | A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga2O·11Al2O3 nanonet then served as a Ga2O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga2O3 powder at the surface of the produced Ga2O·11Al2O3 nanonet and the metallic Ga or Ga2O from the Ga2O·11Al2O3 decomposition ...
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| 关 键 词： | AAO template Ga2O vapor Ga2O·11Al2O3 nanonet GaN nanowire interfacial reaction growth |
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