Spark source mass spectrometric assessment of boron and nitrogen concentrations in crystalline gallium arsenide |
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| Authors: | B Wiedemann G R?dlinger H Ch Alt K G Heumann and K Bethge |
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| Institution: | (1) Institute for Nuclear Physics, Johann Wolfgang Goethe-University, August-Euler-Strasse 6, D-60486 Frankfurt, Germany, DE;(2) Institute of Inorganic Chemistry and Analytical Chemistry, Johannes Gutenberg-University, Becherweg 24, D-55099 Mainz, Germany, DE;(3) Department of Engineering Physics, FHM – University of Applied Sciences, Lothstrasse 34, D-80335 München, Germany, DE |
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| Abstract: | The residual or doped element concentration E] in GaAs measured by SSMS is only accurate with respect to the relative sensitivity
coefficient RSCE. For a trace element concentration, the RSCE = E]SSMS/E]TRUE is set to unity, if no reference material or method is available to approximate the concentration to the true value. For
boron a relative sensitivity coefficient of RSCB = 0.94 ± 0.08 was obtained using TI-IDMS as a reference method. RSCN = 1 is used for nitrogen determinations. A boron and nitrogen detection limit of 4.4 × 1013 cm–3 is achieved. SSMS was used as reference method to calibrate the FTIR factor fE = E] / Iα due to the integrated local vibrational mode absorption Iα of atomic boron and nitrogen in GaAs. A factor of fB = (12.0 × 2.7) × 1016 cm–1 (517 cm–1) and fN = (7.4 ± 0.1) × 1015 cm–1 (472 cm–1) was obtained for a boron and nine nitrogen containing GaAs samples at 77 K and 10 K, respectively.
Received: 15 December 1998 / Revised: 8 April 1999 / Accepted: 13 April 1999 |
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