| 多孔硅的光电化学特性研究 |
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| 引用本文： | 王宝辉,王德军.多孔硅的光电化学特性研究[J].高等学校化学学报,1997,18(4):621-624. |
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| 作者姓名： | 王宝辉 王德军 |
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| 作者单位： | 大庆石油学院安全与劳动保护研究所!安达，151400，吉林大学化学系!长春，130023，吉林大学化学系!长春，130023 |
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| 摘 要： | 研究了多孔硅的光电化学特性和溶液中的光致电荷转移机一，由Ｐ型单晶硅制备的多孔硅具有Ｐ型半导体的光电性质，且光电流响应高于单晶硅，由于多孔硅表面态能级对光致电荷的陷阱作用，多孔硅呈现了独特的光电流响应和光致电荷转移性质。
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| 关 键 词： | 多孔硅 光电流 光电化学 电荷转移 P型 单晶型 |
Studies on Photoelectrochemical Properties of Porous Silicon |
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| WANG Bao-Hui.Studies on Photoelectrochemical Properties of Porous Silicon[J].Chemical Research In Chinese Universities,1997,18(4):621-624. |
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| Authors: | WANG Bao-Hui |
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| Abstract: | The charge transfer and photoelectric properties of porous silicon were investigat-ed by photoelectrochemical techniques. The results show that the porous silicon fabricated bysingle crystalline p-Si exhibits photoelectric properties of p-type semiconductors with a high-er photocurrent than the original silicon. Due to the unique surface structure, the porous sili-con has a particular photocurrent spectrum.This is attributed to the photocharge-trappingeffect of surface states in the porous silicon. |
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| Keywords: | Porous silicon Photocurrent Photoelectrochemistry Charge transfer |
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