| CuInSe_2薄膜的电化学沉积及其形成机理 |
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| 引用本文： | 吴免利,李劼,刘芳洋,刘军,赖延清,张治安,刘业翔.CuInSe_2薄膜的电化学沉积及其形成机理[J].高等学校化学学报,2010,31(2):330-335. |
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| 作者姓名： | 吴免利 李劼 刘芳洋 刘军 赖延清 张治安 刘业翔 |
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| 作者单位： | 中南大学冶金科学与工程学院,长沙,410083 |
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| 基金项目： | 湖南省自然科学基金(批准号:09JJ3110);;湖南省研究生创新基金(批准号:1343-74236000009)资助 |
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| 摘 要： | 采用电化学沉积法制备了太阳电池用CuInSe2薄膜.利用循环伏安法(CV)、X射线能谱(EDS)和X射线衍射技术(XRD)研究了电沉积过程中CuInSe2的形成机理,并研究了制备工艺对膜层成分、形貌和物相结构的影响.研究结果表明,铟进入固相是通过In3+受Cu3Se2诱导作用欠电势还原或者In3+与H2Se反应这两种途径实现;先沉积的Cu3Se2与新生成的铟或铟硒化合物反应最后生成CuInSe2.在阴极电位为-0.58~-0.9 V(vs.SCE)时出现了不随电位变化的极限还原电流,在该电位范围内进行电沉积获得了化学计量组成稳定可控且相对致密平整的CuInSe2薄膜.电沉积的CuInSe2薄膜经真空退火处理后结晶质量得到明显改善.
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| 关 键 词： | CuInSe2 太阳电池 电化学沉积 形成机理 诱导作用 退火处理 |
| 收稿时间： | 2009-03-03 |
Electrodeposition of CuInSe_2 and Its Formation Mechanism |
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| WU Mian-Li,LI Jie,LIU Fang-Yang,LIU Jun,LAI Yan-Qing,ZHANG Zhi-An,LIU Ye-Xiang.Electrodeposition of CuInSe_2 and Its Formation Mechanism[J].Chemical Research In Chinese Universities,2010,31(2):330-335. |
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| Authors: | WU Mian-Li LI Jie LIU Fang-Yang LIU Jun LAI Yan-Qing ZHANG Zhi-An LIU Ye-Xiang |
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| Institution: | School of Metallurgical Science and Engineering;Central South University;Changsha 410083;China |
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| Abstract: | In this paper,CuInSe2 thin films were prepared by electrodeposition.The formation mechanism of CuInSe2 was primarily analyzed by cyclic voltammetry(CV),energy dispersive X-ray spectroscopy(EDS) and X-ray diffraction(XRD).The influence of deposition conditions on film stoichiometry,morphology and structure was also investigated.It was shown that the insertion of In into solid phase may proceed underpotential deposition mechanism involving two different routes: In3+ reduction by induced effect of Cu3Se2,and/o... |
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| Keywords: | CuInSe2 Solar cell Electrodeposition Formation mechanism Induced effect Annealing |
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