NaGdF4:Eu3+/AAO薄膜的制备与表征

采用水热法在多孔阳极氧化铝(AAO)模板上制备了NaGdF<,4>:Eu<'3+>(摩尔分数5.0%)/AAO薄膜,并研究了制备方法、溶液浓度和退火温度对薄膜样品形貌、结构和发光性质的影响.XRD结果表明,在低于500 ℃退火,得到具有NaGdF<,4>六方相结构的NaGdF<,4>:Eu<'3+>/AAO薄膜;而在5...

Preparation and Characterization of NaGdF4: Eu3+/AAO Thin Films

NaGdF4:Eu3+/AAO thin films were prepared on porous anodic aluminum oxide (AAO) template surface via a hydrothermal process and the effects of some processing variables such as preparing method, the amount of NaGdF4:Eu3+, annealing temperature, were investigated. The crystal structure, morphology and luminescent properties of the as-prepared NaGdF4:Eu3+/AAO thin films were characterized by X–ray powder diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) spectra. XRD results show that the phase transition of NaGdF4:Eu3+/AAO thin films from the hexagonal phase to the cubic phase occurs at about 500℃ in air. SEM images indicate that the preparing method influences obviously the morphology of NaGdF4:Eu3+/AAO thin films, NaGdF4:Eu3+/AAO thin films with the rectangle morphology were prepared by a two-step hydrothermal process, and however the one-step hydrothermal process was employed to prepare NaGdF4:Eu3+/AAO thin films without any special morphology. The amount of NaGdF4:Eu3+ in the solution and the annealing temperature do not obviously affect the morphology of NaGdF4:Eu3+/AAO thin films. PL results show that the characteristic emission of NaGdF4:Eu3+/AAO thin films with hexagonal or cubic NaGdF4 structure is Eu3+ 5D0→7F2 transition.