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Cathodic deposition of ternary In+As+Sb alloys and formation of InAsxSb1−x
Authors:S Cattarin  MM Musiani  U Casellato  P Guerriero  R Bertoncello
Abstract:In+As+Sb alloys have been deposited onto Ni and Ti cathodes from tartaric acid solutions at pH 2. Homogeneous deposits of composition suitable for achieving InAsxSb1−x can be obtained from this medium. The As-to-Sb ratio can be controlled by properly selecting solution composition and deposition potential.X-ray photoelectron spectroscopy and X-ray diffraction analyses show that formation of III–V compounds occurs at room temperature. In reacts preferentially with As rather than with Sb, but crystalline phases formed at room temperature are Sb-rich. After annealing the In+As+Sb alloys at 250°C, the composition calculated from cell parameters appears similar to that measured by energy-dispersive X-ray analysis, suggesting that the entire deposit has been converted into the InAsxSb1−x crystalline phase.
Keywords:Thin-film semiconductors  Cathodic deposition  In+As+Sb alloys  InAsxSb1−  x
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