Intrinsic intermediate gap states of TiO2 materials and their roles in charge carrier kinetics |
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| Institution: | 1. State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan City, Hubei Province 430070, PR China;2. State Key Laboratory of Advanced Technology for Material Synthesis and processing, Wuhan University of Technology, Wuhan City, Hubei Province 430070, PR China;3. Department of Chemistry, Materials Chemistry Centre, University College London, 20 Gordon St., London WC1H 0AJ, UK;4. Research Institute for Science and Technology, Energy and Environment Photocatalyst Research Division, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan;1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;2. Department of Physics, Hubei Nuclear-Solid Physics Key Laboratory and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China;1. Faculty of Physics, St. Petersburg State University, Universitetskaya nab. 7/9, St. Petersburg, Petergof, 199034, Russian Federation;2. Photoactive Nanocomposite Materials Laboratory, St. Petersburg State University, Universitetskaya nab. 7/9, St.Petersburg, Petergof, 199034, Russian Federation;3. PhotoGreen Laboratory, Dipartimento di Chimica, Universita di Pavia, via Taramelli 12, Pavia 27100, Italy;1. School of Science, Tianjin University, Tianjin 300072, PR China;2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin 300072, PR China;3. Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, PR China;1. Sorbonne Universités, UPMC Univ Paris 06, CNRS, Collège de France, Laboratoire de Chimie de la Matière Condensée de Paris (LCMCP), 11 place Marcelin Berthelot, F-75005, Paris, France;2. Univ Paris-Sud, Laboratoire de Chimie Physique, UMR8000, 91405 Orsay, France;3. ENSICAEN, Univ de Caen, Laboratoire Catalyse et Spectrochimie, CNRS, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France;1. Department of Process Engineering, Faculty of Engineering, Badji Mokhtar University, P.O. Box 12, 23000 Annaba, Algeria;2. Laboratory of Organic Synthesis-Modeling and Optimization of Chemical Processes, Badji Mokhtar University, P.O. Box 12, 23000 Annaba, Algeria;3. Univ Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR – UMR 6226, F-35000 Rennes, France;4. Ecole des Métiers de l’Environnement, Campus de Ker Lann, 35170 Bruz, France;5. Ecole Polytechnique Fédérale de Lausanne, EPFL-STI-LTP, Station 12, CH-1015 Lausanne, Switzerland |
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| Abstract: | Titanium dioxide (TiO2) is regarded as an important prototype photocatalytic material for several decades. The charge carrier kinetics determines the photocatalytic properties of TiO2 materials; this is found to be greatly dependent on electronic structures. It has been revealed that the intrinsic intermediate gap states (intrinsic GSs) play a significant role in charge carrier kinetics that drive the photocatalytic processes of TiO2 materials, which are not well summarized until now. Motivated by this thought, the purpose of this review focuses on physiochemical science of the intrinsic GSs of TiO2 materials and their important role in charge carrier kinetics. We first give a summary on the chemical resources of the intrinsic GSs in TiO2 and their physiochemical nature. Their general energy distribution, charge carrier population, and the associated thermodynamic properties are also elaborated from an overall viewpoint. We further carefully summarize and compare the experimental studies on the energy and the density distribution of the intrinsic GSs and discuss the associated chemical resources and charge carrier localizations. Trapping is the dominant function of intrinsic GSs in the charge carrier kinetics of TiO2 materials. The significant effect of trapping on the transport, recombination, and interfacial transfer of charge carriers are also comprehensive summarized. Furthermore, the effects of charge carrier kinetics on photocatalytic performances are also discussed to some extents. Because of the importance of intrinsic GSs in modulating charge carrier kinetics, it is expected to increase the photocatalytic activity by engineering the intrinsic GSs, not only for TiO2 materials, but also for the other semiconductor photocatalysts. |
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| Keywords: | Intermediate gap states Intrinsic defects Charge carrier localization Charge carrier kinetics Photocatalysis |
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