HOMO Stabilisation in π‐Extended Dibenzotetrathiafulvalene Derivatives for Their Application in Organic Field‐Effect Transistors |
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| Authors: | Dr Yan Geng Dr Raphael Pfattner Antonio Campos Prof Wei Wang Dr Olivier Jeannin Dr Jürg Hauser Dr Joaquim Puigdollers Prof Stefan T Bromley Prof Silvio Decurtins Prof Jaume Veciana Prof Concepció Rovira Dr Marta Mas‐Torrent Dr Shi‐Xia Liu |
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| Institution: | 1. Departement für Chemie und Biochemie, Universit?t Bern, Freiestrasse 3, 3012 Bern (Switzerland), Fax: (+41)?31‐631‐3995;2. Institut de Ciència de Materials de Barcelona (ICMAB‐CSIC) and Networking Research Center on Bioengineering, Biomaterials, and Nanomedicine (CIBER‐BBN), Campus UAB, 08193 Bellaterra (Spain), Fax: (+34)?935805729;3. Present address: Key Laboratory of Sensor Analysis of Tumor Marker, Ministry of Education, College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042 (P.R. China);4. Present address: Université de Rennes 1‐UMR CNRS 6226, “Sciences Chimiques de Rennes”‐MaCSE group Bat 10C, Campus de Beaulieu ‐ 35042 Rennes cedex (France);5. Dept. Enginyeria Electrònica, Universitat Politècnica Catalunya, 08034 Barcelona (Spain);6. Departament de Química Física & Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, 08028 Barcelona, (Spain) and Institució Catalana de Recerca i Estudis Avan?ats (ICREA), 08010 Barcelona (Spain) |
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| Abstract: | Three new organic semiconductors, in which either two methoxy units are directly linked to a dibenzotetrathiafulvalene (DB‐TTF) central core and a 2,1,3‐chalcogendiazole is fused on the one side, or four methoxy groups are linked to the DB‐TTF, have been synthesised as active materials for organic field‐effect transistors (OFETs). Their electrochemical behaviour, electronic absorption and fluorescence emission as well as photoinduced intramolecular charge transfer were studied. The electron‐withdrawing 2,1,3‐chalcogendiazole unit significantly affects the electronic properties of these semiconductors, lowering both the HOMO and LUMO energy levels and hence increasing the stability of the semiconducting material. The solution‐processed single‐crystal transistors exhibit high performance with a hole mobility up to 0.04 cm2 V?1 s?1 as well as good ambient stability. |
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| Keywords: | donor– acceptor systems fused‐ring systems molecular electronics semiconductors thin films |
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